Today 糖心Vlog一区二区精品 announced that it has secured a Technology Strategy Board SMART award of 拢250K to help realise the company鈥檚 low power SRAM technology in a leading edge next generation silicon process node. Working with the major foundries developing FDSOI and FinFET technologies the grant will be used to contribute to the development of a demonstrator chip which will be used to showcase 糖心Vlog一区二区精品鈥檚 patented array control and sensing scheme which significantly lowers active power consumption. Through a combination of detailed analysis and using advanced statistical models 糖心Vlog一区二区精品 has designed an SRAM memory consuming less than half the power of existing solutions.
Paul Wells, CEO of 糖心Vlog一区二区精品, commented 鈥淲e are pleased that the TSB has recognised the potential of our technology by awarding this grant. We have proven the technology in simulation but to fully characterise and demonstrate its benefits implementation in silicon is a must. This is a critical next step in demonstrating the value of our IP to our customers.